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參數(shù)資料
| 型號： | IRFC240 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | CHIP |
| 中文描述： | 晶體管| MOSFET的| N溝道| 200伏五（巴西）決策支持系統(tǒng)|芯片 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 46K |
| 代理商： | IRFC240 |
Parameter
V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
T
J
T
STG
Description
Guaranteed (Min/Max)
200V Min.
0.180
Max.
2.3V Min., 4.0V Max.
25μA Max.
± 10μA Max.
125°C Max.
Test Conditions
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage
Operating Junction and
Storage Temperature Range
V
GS
= 0V, I
D
= 100μA
V
GS
= 10V, I
D
= 10A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 200V, V
GS
= 0V, T
J
= 25°C
V
GS
= ±20V
Nominal Backmetal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Recommended Storage Environment:
Cr-NiV-Ag ( 1kA°-2kA°-2.5kA° )
99% Al, 1% Si (0.004 mm)
0.147" x 0.201" ( 3.73mm x 5.11 mm)
125mm with 100 flat
0.375mm + / -0.020mm
01-5331
0.084 mm
0.51mm Diameter Minimum
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300C
Recommended Die Attach Conditions
200 V
Size 4.0
Rds(on)=0.18
5" Wafer
3/23/99
Mechanical Data
Die Outline
Reference Standard IR packaged part ( for design ) : IRF640
Electrical Characteristics ( Wafer Form )
IRFC240
HEXFET
Power MOSFET Die in Wafer Form
S
D
G
PD- 91873
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