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參數資料
| 型號： | IRF830FI |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 3A I(D) | TO-220VAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 500V五（巴西）直| 3A條（丁）|對220VAR |
| 文件頁數： | 7/10頁 |
| 文件大?。?/td> | 190K |
| 代理商： | IRF830FI |
IRF830AS/L
www.irf.com
7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
Fig 14.
For N-Channel HEXFET
Power MOSFET
*
V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF830FP | 制造商:SUNTAC 制造商全稱:SUNTAC 功能描述:POWER MOSFET |
| IRF830H | 制造商:HAR 功能描述:IRF830 HARRIS |
| IRF830I-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| IRF830L | 功能描述:MOSFET N-Chan 500V 4.5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF830LPBF | 功能描述:MOSFET N-Chan 500V 4.5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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