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參數資料
| 型號： | IRF822FI |
| 廠商： | 意法半導體 |
| 英文描述： | N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
| 中文描述： | N通道增強型功率MOSTRANSISTORS |
| 文件頁數： | 2/10頁 |
| 文件大小： | 168K |
| 代理商： | IRF822FI |
IRF820AS/L
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– 0.60 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
V
GS(th)
Gate Threshold Voltage
2.0
–––
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
2
www.irf.com
Parameter
Min. Typ. Max. Units
1.4
–––
–––
––– 17 I
D
= 2.5A
–––
–––
4.3
–––
–––
8.5
–––
8.1
–––
–––
12
–––
–––
16
–––
–––
13
–––
–––
340
–––
–––
53
–––
–––
2.7
–––
–––
490
–––
–––
15
–––
–––
28
–––
Conditions
V
DS
= 50V, I
D
= 1.5A
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Avalanche Characteristics
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
S
nC
V
DS
= 400V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 250V
I
D
= 2.5A
R
G
= 21
R
D
= 97
,See Fig. 10
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 400V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 400V
pF
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Parameter
Typ.
–––
–––
–––
Max.
140
2.5
5.0
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 2.5A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.5A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
330
760 1140
1.6
500
V
ns
nC
Diode Characteristics
2.5
10
A
Min. Typ. Max. Units
500
–––
Conditions
V
GS
= 0V, I
D
= 250μA
–––
V
–––
–––
–––
–––
–––
–––
3.0
4.5
25
250
100
-100
V
V
GS
= 10V, I
D
= 1.5A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 125°C
V
GS
= 30V
V
GS
= -30V
μA
nA
I
GSS
I
DSS
Drain-to-Source Leakage Current
Parameter
Typ.
–––
–––
Max.
2.5
62
Units
°C/W
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted, steady-state)*
Thermal Resistance
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