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參數資料
| 型號： | IRF3007L |
| 英文描述： | 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
| 中文描述： | 75V的單個N -溝道HEXFET功率MOSFET的采用TO - 262封裝 |
| 文件頁數： | 2/11頁 |
| 文件大?。?/td> | 643K |
| 代理商： | IRF3007L |
2
www.irf.com
Parameter
Min. Typ. Max. Units
75
–––
–––
0.084 –––
–––
10.5
2.0
–––
180
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
89
–––
21
–––
30
–––
12
–––
80
–––
55
–––
49
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 48A
V
DS
= 10V, I
D
= 250μA
V
DS
= 25V, I
D
= 48A
V
DS
= 75V, V
GS
= 0V
V
DS
= 60V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 48A
V
DS
= 60V
V
GS
= 10V
V
DD
= 38V
I
D
= 48A
R
G
= 4.6
V
GS
= 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 60V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 60V
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
m
V
S
12.6
4.0
–––
20
250
200
-200
130
32
45
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Source-Drain Ratings and Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
3270
520
78
3500
340
640
–––
–––
–––
–––
–––
–––
pF
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 48A, V
GS
= 0V
T
J
= 25°C, I
F
= 48A, V
DD
= 38V
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
85
280
1.3
130
420
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
80
320
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25°C, L = 0.24mH
R
G
= 25
, I
AS
= 48A, V
GS
=10V (See Figure 12).
I
SD
≤
48A, di/dt
≤
330A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
400μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
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