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參數資料
型號: IRF2204STRR
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 170A I(D) | TO-263AB
中文描述: 晶體管| MOSFET的| N溝道| 40V的五(巴西)直| 170A條(丁)|對263AB
文件頁數: 1/11頁
文件大小: 224K
代理商: IRF2204STRR
Parameter
Max.
170
120
850
200
1.3
± 20
460
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
A
W
W/°C
V
mJ
A
mJ
V
GS
E
AS
I
AR
E
AR
T
J
T
STG
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
HEXFET
Power MOSFET
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the lastest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features to this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications
and a wide variety of other applications.
S
D
G
Absolute Maximum Ratings
V
DSS
= 40V
R
DS(on)
= 3.6m
I
D
= 170A
Description
07/01/02
www.irf.com
1
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Features
Typical Applications
Electric Power Steering
14 Volts Automotive Electrical Systems
AUTOMOTIVE MOSFET
Thermal Resistance
Parameter
Typ.
–––
–––
Max.
0.75
40
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
PD - 94502
IRF2204S
IRF2204L
D
2
Pak
IRF2204S
TO-262
IRF2204L
°C/W
相關PDF資料
PDF描述
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IRF240R TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-204AE
IRF241R TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 18A I(D) | TO-204AE
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