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參數資料
| 型號： | FM0560-N |
| 廠商： | 美麗微半導體有限公司 |
| 英文描述： | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| 中文描述： | 肖特基二極管芯片-硅外延式龍門 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 79K |
| 代理商： | FM0560-N |
FM0520-N THRU FM0560-N
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of ML-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECSOD-323
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.04 gram
(V)
(V)
(V)
(V)
(
o
C)
FM0520-N
A
20
14
20
0.40
FM0530-N
B
30
21
30
FM0540-N
C
40
28
40
FM0550-N
D
50
35
50
FM0560-N
E
60
42
60
0.65
-55 to +125
-55 to +150
0.45
SYMBOLS
MARKING
CODE
Operating
temperature
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
I
O
0.5
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
15
A
V
R
= V
RRM
T
A
= 25
o
C
0.5
mA
V
R
= V
RRM
T
A
= 125
o
C
10
mA
Thermal resistance
Junction to ambient
R
q
JC
90
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
120
pF
Storage temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
0.012(0.3) Typ.
0.035(0.9) Typ.
0.035(0.9) Typ.
Dimensions in inches and (millimeters)
SOD-323
0.106 (2.7)
0.090 (2.3)
0.053 (1.35)
0.045 (1.15)
0.044 (1.1)
0.035 (0.9)
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|---|---|
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