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參數資料
| 型號： | FLL810IQ-4C |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | L-Band High Power GaAs FET |
| 中文描述： | L波段高功率GaAs場效應管 |
| 文件頁數： | 4/4頁 |
| 文件大小： | 130K |
| 代理商： | FLL810IQ-4C |
4
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
2001 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI05019M200
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
FLL810IQ-4C
L-Band High Power GaAs FET
Case Style "IQ"
1
2.4±0.15
4-0.1
1
5
14.9±0.2
8
2
2
4-R1.3±0.2
6.0
4
1
4-2.0
1
2
5
4
3
6
24±0.35
20.4±0.2
45
°
Unit: mm (inches)
1, 2: Gate
3: Source
4, 5: Drain
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