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參數(shù)資料
| 型號(hào)： | DE475-501N44A |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power MOSFET |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | D5, 6 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | DE475-501N44A |
Directed Energy, Inc.
IXYS
Company
An
DE475-501N44A
RF Power MOSFET
Symbol
Test Conditions
Characteristic Values
(
T
J
= 25°C unless otherwise specified)
min.
typ.
max.
R
G
0.3
C
iss
5500
pF
C
oss
V
GS
= 0 V, V
DS
= 0.8 V
DSS(max)
,
f = 1 MHz
990
pF
C
rss
330
pF
T
d(on)
5
ns
T
on
V
GS
= 15 V, V
DS
= 0.8 V
DSS
I
D
= 0.5 I
DM
R
G
= 0.2
(External)
5
ns
T
d(off)
5
ns
T
off
8
ns
Q
g(on)
162
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
I
D
= 0.5 I
D25
56
nC
Q
gd
70
nC
R
thJHS
0.20
K/W
Source-Drain Diode
Characteristic Values
(
T
J
= 25°C unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
44
A
I
SM
Repetitive; pulse width limited by T
JM
264
A
V
SD
1.5
V
T
rr
200
ns
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle
≤
2%
Q
RM
I
F
= I
, -di/dt = 100A/
μ
s,
V
R
= 100V
0.6
μ
C
I
RM
14
A
Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions.
DEI MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,891,686
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
5,640,045
For detailed device mounting and installation instructions, see the “
DE-
Series MOSFET Mounting Instructions
” technical note on DEI’s web site at
www.directedenergy.com/apptech.htm
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