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參數資料
| 型號： | DE375-102N10A |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power MOSFET |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數： | 1/3頁 |
| 文件大小： | 157K |
| 代理商： | DE375-102N10A |
DE375-102N10A
RF Power MOSFET
V
DSS
I
D25
R
DS(on)
P
DC
= 1000 V
=
=
1.2
=
940 W
10 A
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25°C to 150°C
1000
V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 M
1000
V
V
GS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
c
= 25°C
10
A
I
DM
T
c
= 25°C, pulse width limited by T
JM
60
A
I
AR
T
c
= 25°C
10
A
E
AR
T
c
= 25°C
30
mJ
dv/dt
I
S
≤
I
DM
, di/dt
≤
100A/
μ
s, V
DD
≤
V
DSS
,
T
j
≤
150°C, R
G
= 0.2
5 V/ns
I
S
= 0
>200 V/ns
P
DHS
T
= 25°C
Derate 4.4W/°C above 25°C
425
W
P
DAMB
T
c
= 25°C
4.5
W
R
thJC
0.16
C/W
R
thJHS
0.23
C/W
P
DC
940
W
Symbol
Test Conditions
Characteristic Values
T
J
= 25°C unless otherwise specified
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3 ma
1000
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 ma
2.5
5.5
V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0
±100 nA
I
DSS
V
DS
= 0.8 V
T
J
= 25°C
V
GS
= 0 T
J
= 125°C
50
1
μ
A
mA
R
DS(on)
1.2
g
fs
V
DS
= 15 V, I
D
= 0.5I
D25
, pulse test
6
18
S
V
GS
= 15 V, I
D
= 0.5I
D25
Pulse test, t
≤
300
μ
S, duty cycle d
≤
2%
T
J
-55
+150 °C
T
JM
150
°C
T
stg
-55
+150 °C
T
L
1.6mm (0.063 in) from case for 10 s
300
°C
Weight
3
g
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
IXYS advanced low Q
g
process
Low gate charge and capacitances
easier to drive
faster switching
Low R
DS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Advantages
Optimized for RF and high speed
switching at frequencies to 50MHz
Easy to mount—no insulators needed
High power density
N-Channel Enhancement Mode
Low Q
g
and R
g
High dv/dt
Nanosecond Switching
DRAIN
SG1
SG2
GATE
SD1
SD2
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相關代理商/技術參數 |
參數描述 |
|---|---|
| DE375-102N10A_09 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:RF Power MOSFET |
| DE375-102N11-00 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 11A I(D) |
| DE375-102N12A | 制造商:IXYS Corporation 功能描述:Trans MOSFET N-CH 1KV 12A 6-Pin(4+2Tab) 制造商:IXYS Corporation 功能描述:MOSFET N RF DE375 制造商:IXYS Corporation 功能描述:MOSFET, N, RF, DE375 制造商:IXYS Corporation 功能描述:RF MOSFET, N CHANNEL, 1KV, DE-375; Transistor Type:RF MOSFET; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:12A; Power Dissipation Pd:940W; Operating Temperature Min:-55C; Operating Temperature Max:175C; No. of Pins:6 ;RoHS Compliant: Yes |
| DE375-102N30-00 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 30A I(D) |
| DE375-301N35-00 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 35A I(D) |
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