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參數資料
| 型號： | AOL1426 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 46 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | GREEN, ULTRASO-8, 3 PIN |
| 文件頁數： | 2/6頁 |
| 文件大小： | 231K |
| 代理商： | AOL1426 |
AOL1426
Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
TJ=55°C
5
IGSS
0.1
A
VGS(th)
1
1.55
2.5
V
ID(ON)
120
A
8.5
10.5
TJ=125°C
14.5
18
10.2
13.5
m
gFS
40
S
VSD
0.73
1.0
V
IS
46
A
Ciss
1210
1452
pF
Coss
330
pF
Crss
85
pF
Rg
1.2
1.6
Qg(10V)
22
28
nC
Qg(4.5V)
10
13
nC
Qgs
3.7
nC
Qgd
2.7
nC
tD(on)
10
ns
tr
6.3
ns
tD(off)
21
ns
tf
2.8
ns
trr
36
45
ns
Qrr
47
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate Drain Charge
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Total Gate Charge
VGS=10V, VDS=15V, ID=20A
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75,
RGEN=3
Turn-Off Fall Time
Turn-On DelayTime
m
VGS=4.5V, ID=20A
IS=1A,VGS=0V
VDS=5V, ID=20A
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS ID=250A
VDS=30V, VGS=0V
VDS=0V, VGS= ±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s
Drain-Source Breakdown Voltage
On state drain current
ID=250A, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=20A
Reverse Transfer Capacitance
IF=20A, dI/dt=100A/s
A: The value of RθJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T J(MAX)=175°C.
G. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
H. Surface mounted on a 1 in
2 FR-4 board with 2oz. Copper.
* This device is guaranteed green after date code 8P11 (June 1
ST 2008)
Rev5: Dec 2008
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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