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參數資料
| 型號： | AOD472 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 55 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | GREEN, DPAK-3 |
| 文件頁數： | 2/6頁 |
| 文件大小： | 144K |
| 代理商： | AOD472 |
AOD472
Symbol
Min
Typ
Max
Units
BVDSS
25
V
1
TJ=55°C
5
IGSS
100
nA
VGS(th)
1.2
1.4
2.5
V
ID(ON)
150
A
56
TJ=125°C
7.5
7.6
9.5
gFS
49
S
VSD
0.74
1
V
IS
50
A
Ciss
2050
2460
pF
Coss
485
600
pF
Crss
280
400
pF
Rg
0.86
1.5
Qg(10V)
41
50
nC
Qg(4.5V)
20
25
nC
Qgs
7.3
8.8
nC
QgsVth
3.4
4
nC
Qgd
8.2
11.5
nC
tD(on)
7.5
10
ns
tr
11
22
ns
tD(off)
27
35
ns
tf
816
ns
trr
30
36
ns
Qrr
19
23
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=12.5V,
RL=0.68, RGEN=3
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
VGS=10V, VDS=12.5V, ID=20A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Gate Source Charge at Vth
m
Forward Transconductance
Diode Forward Voltage
IS=1A, VGS=0V
VDS=5V, ID=20A
VGS=4.5V, ID=20A
IF=20A, dI/dt=100A/s
VGS=0V, VDS=12.5V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
A
Gate Threshold Voltage
ID=250uA, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=30A
Reverse Transfer Capacitance
VDS=VGS, ID=250A
VDS=20V, VGS=0V
VDS=0V, VGS=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
RDS(ON)
Static Drain-Source On-Resistance
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
Gate resistance
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1
ST 2008).
Rev9: Feb 2010
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AOD472_050 | 制造商:AOS 功能描述:MOSFET |
| AOD472A | 功能描述:MOSFET N-CH 25V 55A TO-252 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:SDMOS™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| AOD472AL | 制造商:Alpha & Omega Semiconductor 功能描述: |
| AOD472L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOD474 | 制造商:Alpha & Omega Semiconductor 功能描述:MOSFET N-CH 75V 10A TO252 |
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