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參數(shù)資料
| 型號： | AGRA10GM |
| 廠商： | LSI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | PLASTIC PACKAGE-8 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 255K |
| 代理商： | AGRA10GM |
Agere Systems Inc.
3
Preliminary Data Sheet
AGRA10GM Plastic Overmold
September 2004
10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET
Electrical Characteristics (continued)
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 5. RF Characteristics, 865 MHz—895 MHz
1. Across band, 865 MHz—895 MHz.
Table 6. RF Characteristics, 921 MHz—960 MHz
1. Across band, 921 MHz—960 MHz.
Parameter
Symbol
Min
Typ
Max
Unit
Linear Power Gain (VDS = 28 V, POUT = 3 W, IDQ = 115 mA)
GL
—21
—
dB
Output Power (VDS = 28 V, 1 dB compression, IDQ = 115 mA)
P1dB
10
12
—
W
Drain Efficiency (VDS = 28 V, POUT = P1dB, IDQ = 115 mA)
η
—56
—
%
Two-tone Linearity Characterization
(50 kHz spacing, VDS = 28 V, POUT = 10 W, IDQ = 115 mA)
IMD
—
–33
—
dBc
Input Return Loss
IRL
—
–10
–8
dB
Ruggedness
(VDS = 28 V, POUT = 10 W, IDQ = 115 mA, VSWR = 10:1, all angles)
ψ
No degradation in output power.
Parameter
Symbol
Min
Typ
Max
Unit
Functional Tests (in Agere Systems Supplied Test Fixture)1
Linear Power Gain (VDS = 26 V, POUT = 2 W, IDQ = 115 mA)
GPS
20
20.5
—
dB
Output Power (VDS = 26 V, 1 dB gain compression, IDQ = 115 mA)
P1dB
10
11
—
W
Drain Efficiency (VDS = 26 V, POUT = P1dB, IDQ = 115 mA)
η
48
53
—
%
EDGE Linearity Characterization
(POUT = 2 W, f = 940.5 MHz, VDS = 28 V, IDQ = 115 mA):
Modulation Spectrum @ ±400 kHz (Alt1)
–60
–63
—
dBc
Modulation Spectrum @ ±600 kHz (Alt2)
–72
–75
—
dBc
Input Return Loss
IRL
—
–10
–8
dB
Ruggedness
(VDS = 26 V, POUT = 10 W, IDQ = 115 mA, VSWR = 10:1, all angles)
ψ
No degradation in output power.
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