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參數(shù)資料
| 型號(hào)： | AGR19180EU |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SURFACE MOUNT PACKAGE-2 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 230K |
| 代理商： | AGR19180EU |
6
Agere Systems Inc.
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
July 2003
AGR19180E
Preliminary Data Sheet
Typical Performance Characteristics (continued)
Figure 6. Intermodulation Distortion versus Output Power
Figure 7. Pulsed CW Output Power versus Input Power
-90
-80
-70
-60
-50
-40
-30
-20
-10
1
10
100
1000
Pout, OUTPUT POWER (WATTS) PEP
IM
D
,
IN
T
E
R
M
O
DUL
AT
IO
N
DI
ST
O
R
T
ION
(
d
B
c)
Vdd = 28V Idq = 1600mA
Center Frequency = 1960 MHz
Two-Tone Measurement, 100kHz Tone Spacing
3rd Order
5th Order
7th Order
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
Pin, INPUT POWER (dBm)
P
o
ut
,O
U
T
P
U
T
P
O
W
E
R
(
d
B
m
)
Vdd = 28 Vdc, Idq = 1600 mA
Pulsed CW 4 msec (on), 40 msec (off)
Center Frequency = 1960 MHz
P1dB = 53 dBm (199.77W)
P3dB = 53.88 dBm (244.34W)
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