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參數資料
| 型號： | AGR18060EU |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數： | 8/9頁 |
| 文件大?。?/td> | 397K |
| 代理商： | AGR18060EU |
60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
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Typical Performance Characteristics (continued)
VDD = 26 V, IDQ = 500 mA, FREQUENCY = 1842.5 MHz, EDGE MODULATION.
Figure 11. Power Gain, IRL, IMD, and Efficiency Versus Supply Voltage
VDD = 26 V, IDQ = 500 mA, FREQUENCY = 1842.5 MHz, EDGE MODULATION.
Figure 12. Gain, Efficiency, IRL, and Spectral Regrowth Versus Output Power
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EFFICIENCY
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GPS
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POUT, OUTPUT POWER (WATTS)Z
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EFFICIENCY
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AGR18090E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18090EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR18090EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18125E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18125EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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