
MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION
725 E. Walnut St., Garland, TX 75040
(972)272-3571
Fax (972)487-6918
www.micropac.com
E-MAIL: OPTOSALES @ MICROPAC.COM
3 - 17
66168
Rev. A 4/25/00
ELECTRICAL CHARACTERISTICS
T
A
= 25
°
C unless otherwise specified.
PARAMETER
Input Diode Static Reverse Current
Input Diode Static Forward Voltage -55
°
C
PROTON RADIATION TOLERANT OPTOCOUPLER
(Pin-for-Pin Replacement for 4N49)
SYMBOL
I
R
V
F
MIN
TYP
MAX
100
UNITS
μA
TEST CONDITIONS
V
R
= 2V
I
F
= 10mA
NOTE
1.0
2.4
V
Input Diode Static Forward Voltage +25
°
C
V
F
0.8
1.7
2.0
V
I
F
= 10mA
I
F
= 10mA
Input Diode Static Forward Voltage +100
°
C
OUTPUT TRANSISTOR
T
A
= 25
C unless otherwise specified.
PARAMETER
Collector-Base Breakdown Voltage
V
F
0.7
1.8
V
SYMBOL
V
(BR)CBO
V
(
BR
)
CEO
MIN
45
TYP
MAX
UNITS
V
TEST CONDITIONS
I
C
= 100
μ
A, I
B
= 0, I
F
= 0
I
C
= 1mA, I
B
= 0, I
F
= 0
NOTE
Collector-Emitter Breakdown Voltage
40
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
7
V
I
C
= 0mA, I
E
= 100
μ
A, I
F
= 0
Off-State Collector Current +100
°
C
I
C(OFF)
I
C(OFF)
100
100
nA
μ
A
V
CE
= 20V, I
F
= 0mA, I
B
= O
V
CE
= 20V, I
F
= 0mA, I
B
= O
COUPLED CHARACTERISTICS
T
A
= 25
°
C unless otherwise specified.
PARAMETER
On State Collector Current
SYMBOL
I
C(ON)
MIN
2.0
TYP
MAX
UNITS
mA
TEST CONDITIONS
V
CE
= 5V, I
F
= 1mA
NOTE
On State Collector Current +100
°
C
I
C(ON)
0.5
mA
V
CE
= 0.4V, I
F
= 2mA
2
On State Collector Current -55
°
C
I
C(ON)
0.7
mA
V
CE
= 5V, I
F
= 2mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.3
V
I
F
= 2mA, I
C
= 2mA, I
B
= 0
Input to Output Internal Resistance
R
IO
10
11
V
IN-OUT
= 500V
1
Input to Output Capacitance
C
IO
2.5
5
pF
f = 1MHz, V
IN-OUT
= 1kV
1
Rise Time-Phototransistor Operation
t
r
10
25
μ
s
V
CC
= 10V, I
F
= 5mA,
R
L
= 100
, I
B
= 0
Fall Time-Phototransistor Operation
t
f
10
25
μ
s
V
CC
= 10V, I
F
= 5mA,
R
L
= 100
, I
B
= 0
Rise Time-Photodiode Operation
t
r
0.85
3
μ
s
V
CC
= 10V, I
F
= 5mA,
R
L
= 100
, I
E
= 0
Fall Time-Photodiode Operation
t
f
0.85
3
μ
s
V
CC
= 10V, I
F
= 5mA,
R
L
= 100
, I
E
= 0
NOTES:
1.
2.
These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together.
This parameter must be measured using pulse techniques (t
W
= 100
μ
s duty cycle
<
1%).
RECOMMENDED OPERATING CONDITIONS:
PARAMETER
SYMBOL
Input Current, Low Level
MIN
0
MAX
90
UNITS
μ
A
I
FL
Input Current, High Level
I
FH
2
10
mA
Supply Voltage
V
CE
5
10
V
Operating Temperature
T
A
-55
100
°
C
SELECTION GUIDE
PART NUMBER
66168-001
66168-101
66168-103
66168-105
66168-300
PART DESCRIPTION
Single Channel Commercial Proton Radiation Tolerant (4N49) Optocoupler (0
°
to 70
°
C)
Single Channel Proton Radiation Tolerant (4N49) Screened to JAN level
Single Channel Proton Radiation Tolerant (4N49) Screened to JANTX level
Single Channel Proton Radiation Tolerant (4N49) Screened to JANTXV level
Single Channel Proton Radiation Tolerant (4N49) Screened to JANS level