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參數資料
| 型號： | 61090-102 |
| 廠商： | MICROPAC INDUSTRIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | TV 11C 11#12 SKT PLUG |
| 中文描述： | 150 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC, SURFACE MOUNT PACKAGE-3 |
| 文件頁數： | 2/2頁 |
| 文件大小： | 82K |
| 代理商： | 61090-102 |
MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION
725 E. Walnut St., Garland, TX 75040
(972) 272-3571
Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
8 - 9
61090
SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (TYPE 2N2222AUB)
ELECTRICAL CHARACTERISTICS
T
A
= 25
°
C unless otherwise specified.
PARAMETER
Collector-Base Breakdown Voltage
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
MIN
75
MAX
UNITS
V
TEST CONDITIONS
I
C
= 10
μ
A, I
E
= 0
I
C
= 10mA, I
B
= 0
μ
A
I
C
= 0, I
E
= 10
μ
A
V
CB
= 60V, I
E
= 0
NOTE
Collector-Emitter Breakdown Voltage
50
V
Emitter-Base Breakdown Voltage
6
V
Collector-Base Cutoff Current
10
nA
10
μ
A
V
CB
= 60V, I
E
= 0, T
A
= 150
°
C
Collector-Emitter Cutoff Current
I
CES
I
EBO
50
nA
V
CE
= 50V
V
EB
= 4.0V, I
C
=0
Emitter-Base Cutoff Current
10
nA
h
fe1
50
-
V
CE
= 10V, I
C
= 0.1mA
h
fe2
75
325
-
V
CE
= 10V, I
C
=1mA
Forward-Current Transfer Ratio
h
fe3
100
-
V
CE
= 10V, I
C
=10mA
h
fe4
100
300
-
V
CE
= 10V, I
C
= 150mA
1
h
fe5
30
-
V
CE
= 10V, I
C
= 500mA
1
h
fe6
35
-
V
CE
= 10V, I
C
= 10mA @ -55
°
C
Collector-Emitter Saturation Voltage
V
CE (SAT)
0.30
V
I
C
= 150mA, I
B
= 15mA
1
1.0
V
I
C
= 500mA, I
B
= 50mA
1
Base-Emitter Saturation Voltage
V
BE (SAT)
0.6
1.20
V
I
C
= 150mA, I
B
= 15mA
1
2.0
V
I
C
= 500mA I
B
= 50mA
1
SMALL-SIGNAL CHARACTERISTICS
Small Signal Forward Current Transfer Ratio
h
fe
h
fe
50
-
V
CE
= 10V, I
C
= 1mA, f = 1kHz
V
CE
= 20V, I
C
= 20mA,
f = 100kHz
V
CB
= 10V, 100kHz,
<
f
<
1 MHz
V
EB
= 0.5 V, 100kHz,
<
f
<
1 MHz
V
CC
= 30V, I
C
= 150mA,
I
B1
= 15mA
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
Small Signal Forward Current Transfer Ratio
2.5
-
Open Circuit Output Capacitance
C
OBO
C
IBO
t
on
8
pf
Input Capacitance (Output Open Capacitance)
25
pf
Turn-On Time
35
ns
Turn-Off Time
t
off
300
ns
NOTES:
1.
Pulse width
<
300
μ
s, duty cycle
<
2.0%.
RECOMMENDED OPERATING CONDITIONS:
PARAMETER
SYMBOL
Bias Voltage-Collector/Emitter
MIN
10
MAX
150
UNITS
mA
I
C
Collector-Emitter Voltage
V
CE
5
20
V
SELECTION GUIDE
PART NUMBER
61090-001
61090-002
61090-101
61090-102
61090-300
PART DESCRIPTION
2N2222AUB PNP transistor, commercial version
2N2222AUB PNP transistor, JAN level screening
2N2222AUB PNP transistor, JANTX level screening
2N2222AUB PNP transistor, JANTXV level screening
2N2222AUB PNP transistor, JANS level screening
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