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參數資料
| 型號： | 41HFR40 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 40 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB |
| 封裝： | DO-5, 1 PIN |
| 文件頁數： | 7/8頁 |
| 文件大小： | 132K |
| 代理商： | 41HFR40 |
40HF(R) Series
7
Bulletin I20201 rev. D 01/05
www.irf.com
Fig. 11 - Forward Voltage Drop Characteristics
(up to 1200V)
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 10 - Maximum Non-Repetitive Surge Current
Fig. 13 - Thermal Impedance Z
thJC Characteristics
Instantaneous Forward Voltage (V)
Instantaneous
Forward
Current
(A)
Square Wave Pulse Duration (s)
Transient
Impedance
Z
thJC
(K/W)
0.01
0.1
1
0.0001 0.001
0.01
0.1
1
10
Steady State Value
(DC Operation)
40HF(R) .. Series
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak
Half
Sine
Wave
Forward
Current
(A)
Pulse Train Duration (s)
Peak
Half
Sine
Wave
Forward
Current
(A)
Fig. 12 - Forward Voltage Drop Characteristics
(for 1400V, 1600V)
Instantaneous Forward Voltage (V)
Instantaneous
Forward
Current
(A)
1
10
100
1000
0
0.5
1
1.5
2
2.5
3
3.5
4
Tj = 25C
Tj = Tj Max
40HF (R) Series
1
10
100
1000
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
40HF(R) Series
up to 1200V
Tj = 25C
Tj = Tj Max.
100
150
200
250
300
350
400
450
500
550
1
10
100
40HF(R) Series
Initial Tj = Tj Max.
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
100
150
200
250
300
350
400
450
500
550
600
0.01
0.1
1
Maximum Non Repetitive Surge Current
40HF(R) Series
Initial Tj = Tj Max.
No Voltage Reapplied
Rated Vrrm Reapplied
Versus Pulse Train Duration.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 41HFR400 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:STANDARD RECOVERY DIODES |
| 41HFR400M | 制造商:IRF 制造商全稱:International Rectifier 功能描述:STANDARD RECOVERY DIODES |
| 41HFR40M | 制造商:IRF 制造商全稱:International Rectifier 功能描述:STANDARD RECOVERY DIODES |
| 41HFR40PBF | 制造商:Vishay 功能描述:Bulk |
| 41HFR60 | 功能描述:DIODE STD REC 600V 40A DO-5 RoHS:是 類別:分離式半導體產品 >> 單二極管/整流器 系列:- 標準包裝:100 系列:- 二極管類型:標準 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復 = 200mA（Io） 反向恢復時間(trr):300ns 電流 - 在 Vr 時反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應商設備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879 |
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