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參數資料
| 型號： | 2SK970 |
| 文件頁數： | 5/7頁 |
| 文件大小： | 39K |
| 代理商： | 2SK970 |
2SK970
R
r
500
200
100
50
20
10
5
0.5
1.0
Reverse Drain Current I
DR
(A)
5
50
10
2
20
Body to Drain Diode Reverse
Recovery Time
di/dt = 50 A/
μ
s, Ta = 25°C
V
= 0
Pulse Test
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
30
10
C
0
10
20
50
Drain to Source Voltage V
DS
(V)
30
100
40
V
= 0
f =1MHz
Ciss
Coss
Crss
100
80
60
40
20
0
4
12
16
Gate Charge Qg (nc)
8
20
16
12
8
4
0
Dynamic Input Characteristics
D
D
G
G
20
I
D
= 10 A
V
DS
V
GS
V
DD
= 50 V
25 V
10 V
25 V
10 V
V
DD
= 50 V
Switching Characteristics
S
500
200
100
50
20
10
5
0.1
0.2
0.5
1.0
2
10
Drain Current I
D
(A)
5
t
d (off)
t
f
t
r
t
d (on)
V
= 10 V
PW = 2
μ
s, duty < 1 %
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK973(L) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK973(S) | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2A I(D) | TO-252AA |
| 2SK974(L) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK974(S) | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA |
| 2SK981 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK970(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK971 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK971(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK972 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK972(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
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