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參數資料
| 型號： | 2SK3511-S |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | 開關N溝道功率MOSFET |
| 文件頁數： | 7/8頁 |
| 文件大小： | 85K |
| 代理商： | 2SK3511-S |
Data Sheet D15617EJ1V0DS
7
2SK3511
PACKAGE DRAWINGS (Unit: mm)
1) TO-220 (MP-25)
2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0 TYP.
3.6±0.2
φ
4
3
1.3±0.2
0.75±0.1
2.54 TYP.
2.54 TYP.
5
6
1
1
1.3±0.2
0.5±0.2
2.8±0.2
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
10 TYP.
1.3±0.2
0.75±0.3
2.54 TYP.
2.54 TYP.
8
1
1.3±0.2
0.5±0.2
2.8±0.2
1
4
3) TO-263 (MP-25ZJ)
4) TO-220SMD (MP-25Z)
Note
1.4±0.2
1
2.54 TYP.
2.54 TYP.
8
1
2
3
5
4
4.8 MAX.
1.3±0.2
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
10 TYP.
05RTYP
08RTYP
2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
10 TYP.
1.4±0.2
1
2.54 TYP.
2.54 TYP.
8
1
2
3
3
1
4
4.8 MAX.
1.3±0.2
0.5±0.2
05RTYP
08RTYP
0.75±0.3
2
Note
This Package is only produced in Japan.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually
used, an additional protection circuit is externally required if a
voltage exceeding the rated voltage may be applied to this device.
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