- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369203 > 2SK3115 (NEC Corp.) Switching N-channel power MOS FET industrial use PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK3115 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí) |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 69K |
| 代理商： | 2SK3115 |
Data Sheet D13338EJ2V0DS
2
2SK3115
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 600 V, V
GS
= 0 V
100
μ
A
Gate Leakage Current
I
GSS
V
GS
= ±30 V, V
DS
= 0 V
±100
nA
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
2.5
3.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 3.0 A
2.0
S
Drain to Source On-state Resistance
R
DS(on)
V
GS
= 10 V, I
D
= 3.0 A
0.9
1.2
Input Capacitance
C
iss
V
DS
= 10 V
1100
pF
Output Capacitance
C
oss
V
GS
= 0 V
200
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
20
pF
Turn-on Delay Time
t
d(on)
V
DD
= 150 V, I
D
= 3.0 A
18
ns
Rise Time
t
r
V
GS(on)
= 10 V
12
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
, R
L
= 50
50
ns
Fall Time
t
f
15
ns
Total Gate Charge
Q
G
V
DD
= 450 V
26
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
6
nC
Gate to Drain Charge
Q
GD
I
D
= 6.0 A
10
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 6.0 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 6.0 A, V
GS
= 0 V
1.4
μ
s
Reverse Recovery Charge
Q
rr
di/dt = 50 A/
μ
s
6.5
μ
C
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
→
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ
= 1
μ
s
Duty Cycle
≤
1%
τ
GS
Wave Form
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS(on)
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
#
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3116 | SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-S | SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-ZJ | SWITCHING N-CHANNEL POWER MOS FET |
| 2SK311 | SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) |
| 2SK310 | SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3115-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 6A 1200m@10V IsolatedTO220 Bulk |
| 2SK3116 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 7.5A 1200m@10V TO220AB Bulk |
| 2SK3116B | 制造商:NEC 制造商全稱:NEC 功能描述:7.5A600V |
| 2SK3116-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。