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參數(shù)資料
| 型號(hào)： | 2SK3113B-ZK-E2-AY |
| 廠商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 7/8頁(yè) |
| 文件大小： | 195K |
| 代理商： | 2SK3113B-ZK-E2-AY |
Data Sheet D18061EJ3V0DS
7
2SK3113B
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3-a)
2) TO-251 (MP-3-b)
6.6
±
0.2
5.3 TYP.
4.3 MIN.
Mold Area
2.3
±
0.1
0.5
±
0.1
0.76
±
0.1
0.5
±
0.1
No Plating
0
6
±
0
1
±
0
9
4
.
1
1
1
4
2
3
1.14 MAX.
2.3 TYP.
2.3 TYP.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
6.6±0.2
2.3±0.1
0.5±0.1
0.76±0.12
0.5±0.1
5.3 TYP.
2.3 TYP.
2.3 TYP.
1
1.14 MAX.
1
1
4
6
1
2
1
3
4
3) TO-252 (MP-3ZK)
EQUIVALENT CIRCUIT
6.5
±
0.2
5.1 TYP.
4.3 MIN.
2.3
±
0.1
0.5
±
0.1
0.76
±
0.12
0 to 0.25
0.5
±
0.1
1.0
No Plating
No Plating
1
6
±
0
0
4
.
0
1
1
4
2
3
1.14 MAX.
2.3
2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
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