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參數(shù)資料
| 型號： | 2SK3113 |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | 開關(guān)N溝道功率MOSFET |
| 文件頁數(shù)： | 7/8頁 |
| 文件大小： | 145K |
| 代理商： | 2SK3113 |
Data Sheet D13336EJ3V0DS
7
2SK3113
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
2) TO-252 (MP-3Z)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2
1
3
6.5 ±0.2
5.0 ±0.2
4
1
0
+
5
7
1
2.3
2.3
0
0.5 ±0.1
2.3 ±0.2
1
1.1 ±0.2
0.5
+0.2
0.5
+0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1
2
3
4
6.5 ±0.2
5.0 ±0.2
4
0
2.3 2.3
0.9
MAX.
5
1
2
M
1
0
+
2.3 ±0.2
0.5 ±0.1
0.8
MAX.
0.8
1
1
0
1.1 ±0.2
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3113-Z | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3114 | SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 2SK3115 | Switching N-channel power MOS FET industrial use |
| 2SK3116 | SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-S | SWITCHING N-CHANNEL POWER MOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3113-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 2A 4400m@10V TO251 Bulk |
| 2SK3113B | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3113B(1)-S27-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3113B-S15 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3113B-S15-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
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