
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
———————————————————————————————————————————
Drain to source breakdown
V
(BR)DSS
450
voltage
———————————————————————————————————————————
Gate to source breakdown
V
(BR)GSS
±30
voltage
———————————————————————————————————————————
Gate to source leak current
I
GSS
—
———————————————————————————————————————————
Zero gate voltage drain current
I
DSS
—
———————————————————————————————————————————
Gate to source cutoff voltage
V
GS(off)
2.0
———————————————————————————————————————————
Static drain to source on state
R
DS(on)
—
resistance
———————————————————————————————————————————
Forward transfer admittance
|y
fs
|
5.0
Symbol
Min
Typ
Max
Unit
Test conditions
—
—
V
I
D
= 10 mA, V
GS
= 0
—
—
V
I
G
= ±100 μA, V
DS
= 0
—
±10
μA
V
GS
= ±25 V, V
DS
= 0
—
250
μA
V
DS
=450 V, V
GS
= 0
—
3.0
V
I
D
= 1 mA, VDS= 10 V
0.4
0.55
I
D
= 4 A
V
GS
= 10 V *
7.5
—
S
I
D
= 4 A
V
DS
= 10 V *
———————————————————————————————————————————
Input capacitance
Ciss
—
————————————————————————————————
Output capacitance
Coss
—
————————————————————————————————
Reverse transfer capacitance
Crss
—
———————————————————————————————————————————
Turn–on delay time
t
d(on)
—
————————————————————————————————
Rise time
t
r
—
————————————————————————————————
Turn–off delay time
t
d(off)
—
————————————————————————————————
Fall time
t
f
—
———————————————————————————————————————————
Body–drain diode forward
V
DF
—
voltage
———————————————————————————————————————————
Body–drain diode reverse
t
rr
—
recovery time
———————————————————————————————————————————
* Pulse Test
1450
—
pF
V
DS
= 10 V
410
—
pF
V
GS
= 0
55
—
pF
f = 1 MHz
20
—
ns
I
D
= 4 A
55
—
ns
V
GS
= 10 V
130
—
ns
R
L
= 7.5
50
—
ns
0.95
—
V
I
F
= 8 A, V
GS
= 0
380
—
ns
IF= 8 A, V
GS
= 0,
diF / dt = 100 A / μs
See characteristics curves of 2SK1165.
2SK2424