- 您現在的位置：買賣IC網 > PDF目錄368943 > 2743019447 (飛思卡爾半導體(中國)有限公司) RF Power Field Effect Transistor PDF資料下載
參數資料
| 型號： | 2743019447 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor |
| 中文描述： | RF功率場效應晶體管 |
| 文件頁數： | 2/15頁 |
| 文件大小： | 579K |
| 代理商： | 2743019447 |
2
RF Device Data
Freescale Semiconductor
MRFE6S9045NR1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
3A (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°
C
Table 5. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 66 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
1
μ
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
10
μ
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
μ
A)
V
GS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 350 mAdc, Measured in Functional Test)
V
GS(Q)
2.3
3.1
3.8
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 1.0 Adc)
V
DS(on)
0.05
0.23
0.3
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.02
—
pF
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
—
27
—
pF
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
iss
—
81
—
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 350 mA, P
out
= 10 W Avg., f = 880 MHz, Single-Carrier
N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @
±
750 kHz Offset. PAR = 9.8 dB
@ 0.01% Probability on CCDF
Power Gain
G
ps
η
D
21
22.1
25
dB
Drain Efficiency
30.5
32
—
%
Adjacent Channel Power Ratio
ACPR
—
-46
-44
dBc
Input Return Loss
IRL
—
-19
-9
dB
(continued)
相關PDF資料 |
PDF描述 |
|---|---|
| 2743021447 | RF Power Field Effect Transistor |
| 2744555566 | WOUND EMI BEAD |
| 2944666631 | 5-Pin, Multiple-Input, Programmable Reset ICs |
| 2745AF | T1/E1 Transformer |
| 2745AF2 | T1/E1 Transformer |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2743019447 | 制造商:Fair-Rite Products Corp 功能描述:SM Bead |
| 2743019447 | 制造商:Fair-Rite Products Corp 功能描述:SM Bead |
| 2743019447H | 制造商:Fair-Rite Products Corp 功能描述:FERRITE BEAD SMD 800mOHM 5A |
| 2743019447L | 功能描述:電磁干擾濾波珠子、扼流圈和陣列 Z=47OHM @ 100MHz RHS 623-2743019447LF RoHS:否 制造商:AVX 阻抗: 最大直流電流:35 mA 最大直流電阻: 容差: 端接類型:SMD/SMT 電壓額定值:25 V 工作溫度范圍:- 25 C to + 85 C 封裝 / 箱體:0603 (1608 metric) |
| 2743019447-TR | 制造商:Fair-Rite Products Corp 功能描述:FERRITE BEAD SMD 800mOHM 5A |
發布緊急采購，3分鐘左右您將得到回復。